In 2003, the compound PtMe3(MeCp) enabled the first Pt metal ALD process and has since been the precursor of choice for Pt thin film growth of this noble metal . The deposition processes rely on the combustion of the chemisorbed Pt precursor by an oxidant, such as the oxygen found in air yielding pure Pt metal thin films [1, 2]. The pronounced reactivity of this compound additionally affords film growth via a reductive approach using hydrogen. At atmospheric pressure reductive CVD was achieved at temperatures as low as 120 °C .
To enable the use of a liquid delivery system PtMe3(MeCp) has to be warmed above 30 °C generating a sufficient vapor pressure (0.4 Torr at 50°C) . We have recently introduced the formerly patent protected ethyl derivative PtMe3(EtCp). This volatile liquid reaches a vapor pressure of 0.1 Torr at 39 °C and can therefore be easily delivered using a liquid bubbler at near room temperature . This potential of PtMe3(EtCp) for Pt film growth was demonstrated in 2003 utilizing a combustion like CVD process . Additionally, the ethyl precursor (78-1375) also enables photo-assisted film growth in hydrogen atmosphere due to an inherent photosensitivity .
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78-1375 (Trimethyl)ethylcyclopentadienylplatinum(IV) (99.999%-Pt) PURATREM (229621-40-3)