High quality LaLuO3, ALD grown from Lanthanum and Lutetium amidinates, is an ideal gate dielectric to replace SiO2 in MOSFETs
Lanthanum and lutetium amidinate precursors are used to grow desirable high-k ternary oxides by atomic layer deposition Silicon-based metal oxide…
Published on the 4th of March 2020
Anyone can find the dirt in someone. Be the one that finds the gold in our precursors!
Recently released is our volatile, air, light and & thermally stable precursor for CVD/ALD of gold thin films
Published on the 18th of April 2019
Strem Chemicals Catalogue is available as a New Digital Version!
Due our large increases in the amount of chemicals and materials and in the spirit of our growing digital…
Published on the 29th of August 2017
New bubbler for ALD and CVD
By popular demand we have continued to expand our selection of electro polished stainless steel bubblers to meet your metal…
Published on the 14th of September 2016
CVD , Monolayer Graphene on Copper Substrate
Copper Foil with CVD Coated Graphene Monolayer for Electronic Studies Monolayer graphene plays an important role in graphene technologies. Exfoliating…
Published on the 11th of June 2015
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