Tag: Silicon-based metal oxide

High quality LaLuO3, ALD grown from Lanthanum and Lutetium amidinates, is an ideal gate dielectric to replace SiO2 in MOSFETs

Lanthanum and lutetium amidinate precursors are used to grow desirable high-k ternary oxides by atomic layer deposition Silicon-based metal oxide…

Published on the 4th of March 2020

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